UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet - Page 6

• Manufacturer Part Number: UPA1890GR-9JG-E2-A
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1890GR-9JG-E2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 748pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
A) N-Channel
4
100
80
60
40
20
25
20
15
10
5
0
3
2
1
0
0
50
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
V
I
Pulsed
DS
D
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
0.2
T
V
DS
T
ch
A
GS
- Drain to Source Voltage - V
0
- Ambient Temperature - ˚C
- Channel Temperature -˚C
= 10 V
60
0.4
50
90
0.6
4.0 V
4.5 V
A
= 25°C)
100
120
0.8
Data Sheet G14762EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
100
0.01
0.01
100
100
0.1
0.1
10
0.1
10
10
1
0.01
1
0.1
1
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
P
0
V
D
V
DS
FORWARD BIAS SAFE OPERATING AREA
(FET1):P
DS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
= 10 V
= 10 V
V
V
TRANSFER CHARACTERISTICS
T
DS
GS
A
D
0.1
= 25˚C
(FET2) = 1:1
1
- Drain to Source Voltage - V
- Gate to Source Voltage - V
125˚C
I
25˚C
75˚C
D
1
- Drain Current - A
2
2
1
T
10
A
= 25˚C
125˚C
3
10
25˚C
75˚C
PA1890
100
100
4