UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet
UPA1890GR-9JG-E2-A
Specifications of UPA1890GR-9JG-E2-A
Related parts for UPA1890GR-9JG-E2-A
UPA1890GR-9JG-E2-A Summary of contents
Page 1
To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
Page 2
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
Page 3
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1890 is a switching device which can be driven directly by a 4.0-V power source. The PA1890 features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...
Page 4
ELECTRICAL CHARACTERISTICS (T A) N-Channel CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
Page 5
B) P-Channel CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge ...
Page 6
TYPICAL CHARACTERISTICS ( N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed V ...
Page 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 125˚ 75˚C 30 25˚C 25˚ 0.1 1 Drain Current - A D DRAIN TO SOURCE ...
Page 8
SWITCHING CHARACTERISTICS 1000 GS(on) R =10 G 100 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 6 ...
Page 9
B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed ...
Page 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 125˚ 75˚C 25˚C 40 -25˚C 20 0.1 1 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE ...
Page 11
SWITCHING CHARACTERISTICS 10000 GS(on d(off) 1000 t f 100 10 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 5.0 A ...
Page 12
C) Common TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 1m 10m 10 Mounted on Ceramic Substrate 2 of 5000 mm x 1.1 mm Single Pulse P (FET1): 100m Pulse Width ...
Page 13
Data Sheet G14762EJ2V0DS PA1890 11 ...
Page 14
The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...