UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet - Page 10

• Manufacturer Part Number: UPA1890GR-9JG-E2-A
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1890GR-9JG-E2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 748pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
100
80
60
40
20
50
40
30
20
10
80
60
40
20
0
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
V
V
GS
GS
= 4.0 V
= 10 V
V
GS
- Gate to Source Voltage - V
5
T
T
A
I
I
D
D
A
1.0
1.0
= 125˚C
- Drain Current - A
- Drain Current - A
= 125˚C
-25˚C
75˚C
25˚C
75˚C
25˚C
25˚C
10
10
10
15
I
D
= 2.5 A
Data Sheet G14762EJ2V0DS
100
100
20
10000
1000
100
80
60
40
20
60
40
20
10
80
0
0
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
V
I
D
GS
= 2.5 A
= 4.5 V
V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
ch
0
- Drain to Source Voltage - V
T
- Channel Temperature -˚C
A
I
D
1.0
= 125˚C
- Drain Current - A
75˚C
25˚C
25˚C
50
10
V
GS
= 4.0 V
10
100
C
C
C
f = 1 MHz
iss
oss
rss
10 V
4.5 V
PA1890
150
100
100