BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 8

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

BSO615C G

Manufacturer Part Number
BSO615C G
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSO615C G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A, 2A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
110 m Ohms / 300 m Ohms
Drain-source Breakdown Voltage
+ 60 V / - 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A, - 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
60.0 V-60.0 V
Id (max)
3.1 A-2.0 A
Idpuls (max)
12.4 A-8.0 A
Rds (on) (max) (@10v)
110.0 mOhm300.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615C
BSO615C G
BSO615CGT
BSO615CGXT
BSO615CINTR
SP000216311
Typ. transfer characteristics (N-Ch.)
parameter: t
I
Typ. forward transconductance (N-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
10.0
A
S
7.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
D
GS
); T
1
), V
p
j
fs
= 25 °C
2
= 80 µs
DS
3
³
2 x I
4
5
D
x R
6
DS(on)max
7
8
Rev. 2.0
V
GS
A
V
I
D
5.0
10
Page 8
Typ. transfer characteristics (P-Ch.)
parameter: t
I
Typ. forward transconductance (P-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
-5.0
A
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
S
0.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.0
D
GS
); T
), V
-1.0
j
p
fs
= 25 °C
= 80 µs
DS
-2.0
³
2 x I
-3.0
D
x R
-4.0
DS(on)max
BSO 615 C G
2006-08-25
A
V
GS
V
I
D
-6.0
-5.0

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