BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 2

• Manufacturer Part Number: BSO615C G
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615C G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 110 m Ohms / 300 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.1 A-2.0 A
• Idpuls (max): 12.4 A-8.0 A
• Rds (on) (max) (@10v): 110.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615C; BSO615C G; BSO615CGT; BSO615CGXT; BSO615CINTR; SP000216311

Static Characteristics, at T
Drain- source breakdown voltage
V
V
Gate threshold voltage, V
I
I
Zero gate voltage drain current
V
V
V
V
Gate-source leakage current
V
V
Drain-source on-state resistance
V
V
Drain-source on-state resistance
V
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Termal Characteristics
Parameter
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
SMD version, device on PCB:
@ min. footprint; t
@ 6 cm
@ min. footprint; t
@ 6 cm
D
D
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
= 20 µA
= -450 µA
= 60 V, V
= 60 V, V
= -60 V, V
= -60 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 4.5 V, I
= -4.5 V, I
= 10 V, I
= -10 V , I
2
2
cooling area
cooling area
D
D
D
D
= 250 µA
= -250 µA
GS
GS
DS
D
D
GS
GS
DS
= 3.1 A
= 2.7 A
= -1.7 A
= -2 A
= 0 V, T
= 0 V, T
= 0 V
= 0 V, T
= 0 V, T
= 0 V
£
£
10 sec.
10 sec.
1)
1)
; t
; t
j
j
GS
j
j
= 25 °C
= 125 °C
£
£
= 25 °C
= 125 °C
j
10 sec.
10 sec.
= V
= 25 °C, unless otherwise specified
DS
Rev. 2.0
Page 2
N
P
N
P
N
N
P
P
N
P
N
P
N
P
N
P
N
N
P
P
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
-60
1.2
60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.27
0.07
0.19
-1.5
-0.1
typ.
1.6
0.1
-10
-10
0.1
10
10
-
-
-
-
-
-
-
-
BSO 615 C G
2006-08-25
-100
-100
max.
0.15
0.45
0.11
62.5
62.5
-2.0
100
100
100
110
2.0
0.3
40
40
-1
1
-
-
V
µA
nA
W
Unit
K/W