BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 12

• Manufacturer Part Number: BSO615C G
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615C G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 110 m Ohms / 300 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.1 A-2.0 A
• Idpuls (max): 12.4 A-8.0 A
• Rds (on) (max) (@10v): 110.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615C; BSO615C G; BSO615CGT; BSO615CGXT; BSO615CINTR; SP000216311

Drain-source breakdown voltage
V
(BR)DSS
V
72
68
66
64
62
60
58
56
54
-60
BSO 615 C
= f ( T
-20
j
), (N-Ch.)
20
60
100
°C
Rev. 2.0
T
j
180
Page 12
Drain-source breakdown voltage
V
(BR)DSS
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
-60
BSO 615 C
= f ( T
-20
j
), (P-Ch.)
20
60
100
BSO 615 C G
2006-08-25
°C
T
j
180