NTJD4158CT1G ON Semiconductor, NTJD4158CT1G Datasheet - Page 6

• Manufacturer Part Number: NTJD4158CT1G
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4158CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 250mA, 880mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4158CT1G; NTJD4158CT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
350
300
250
200
150
100
10
50
1
0
10
1
Figure 9. Resistive Switching Time Variation
C
C
iss
rss
t
t
d(off)
d(on)
t
t
r
f
V
5
DS
TYPICAL P−CHANNEL PERFORMANCE CURVES
R
Figure 7. Capacitance Variation
G
= 0 V
, GATE RESISTANCE (OHMS)
V
vs. Gate Resistance
GS
0
V
V
DS
GS
= 0 V
10
5
10
V
I
V
D
DD
GS
= −0.8 A
= −10 V
= −4.5 V
C
T
15
J
oss
= 25°C
http://onsemi.com
100
20
6
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
0
0
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source Voltage vs. Total
GS
J
−V
Q1
= 25°C
(T
0.1
SD
= 0 V
J
0.4
= 25°C unless otherwise noted)
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Q
0.2
g
, TOTAL GATE CHARGE (nC)
0.8
Q2
Gate Charge
0.3
QT
1.2
0.4
0.5
1.6
I
T
D
0.6
J
= −0.88 A
= 25°C
2
0.7