NTJD4158CT1G ON Semiconductor, NTJD4158CT1G Datasheet - Page 5

• Manufacturer Part Number: NTJD4158CT1G
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4158CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 250mA, 880mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4158CT1G; NTJD4158CT1GOSTR

0.25
0.75
0.25
0.15
0.5
0.3
0.2
0.1
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
−50
0
Figure 3. On−Resistance vs. Drain Current and
V
I
V
−V
GS
D
GS
Figure 1. On−Region Characteristics
= −0.88 A
−25
DS
= −4.5 V
Figure 5. On−Resistance Variation with
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
TYPICAL P−CHANNEL PERFORMANCE CURVES
−2 V
−I
T
0.25
J
D,
, JUNCTION TEMPERATURE (°C)
0
DRAIN CURRENT (AMPS)
V
GS
0.8
Temperature
= −4.5, −3.5 & −2.5 V
25
Temperature
T
T
T
J
J
J
0.5
= 125°C
= 25°C
= −55°C
50
1.2
75
0.75
100
1.6
T
J
= 25°C
−1.75 V
−1.25 V
−1.5 V
−1 V
http://onsemi.com
125
150
2
1
5
10000
1000
100
0.5
0.4
0.3
0.2
0.1
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0
0.4
0
Figure 4. On−Resistance vs. Drain Current and
0
V
T
V
Figure 6. Drain−to−Source Leakage Current
GS
J
DS
−V
= 25°C
−V
(T
= 0 V
DS
≥ −20 V
0.5
J
GS
0.5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 25°C unless otherwise noted)
Figure 2. Transfer Characteristics
25°C
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
5
125°C
DRAIN CURRENT (AMPS)
1
0.6
Gate Voltage
vs. Voltage
V
V
1.5
GS
T
T
GS
T
J
J
J
= 150°C
= 125°C
10
= −2.5 V
= −4.5 V
0.7
= −55°C
2
0.8
2.5
15
0.9
3
3.5
20
1