NTJD4158CT1G ON Semiconductor, NTJD4158CT1G Datasheet - Page 3

• Manufacturer Part Number: NTJD4158CT1G
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4158CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 250mA, 880mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4158CT1G; NTJD4158CT1GOSTR

0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.2
0.1
0.005
1.75
1.25
0.75
0.25
0
1.5
0.5
0
Figure 3. On−Resistance vs. Drain Current and
−50
2
1
0
V
GS
I
V
D
V
GS
= 4.5 V
DS
= 0.01 A
Figure 1. On−Region Characteristics
−25
0.25
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 4.5 V
TYPICAL N−CHANNEL PERFORMANCE CURVES
0.055
T
I
D,
J
, JUNCTION TEMPERATURE (°C)
0
DRAIN CURRENT (AMPS)
2.4 V
0.5
V
Temperature
GS
V
25
Temperature
= 2.6 V
GS
T
T
T
J
J
J
0.105
0.75
= 125°C
= 25°C
= −55°C
= 10 V to 2.8 V
50
75
1
0.155
100
1.25
T
J
= 25°C
http://onsemi.com
2.2 V
1.8 V
125
2 V
0.205
1.5
150
3
1000
0.15
0.05
100
0.2
0.1
2.5
2.0
1.5
1.0
0.5
10
0
0.005
0
1
0
Figure 4. On−Resistance vs. Drain Current and
V
V
T
GS
DS
J
Figure 6. Drain−to−Source Leakage Current
V
= 25°C
V
(T
1.25
= 0 V
= 5 V
DS,
GS
J
5
Figure 2. Transfer Characteristics
= 25°C unless otherwise noted)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.055
I
D,
DRAIN CURRENT (AMPS)
1.5
10
T
J
Gate Voltage
= 125°C
V
V
vs. Voltage
GS
GS
T
T
0.105
1.75
J
J
15
= 2.5 V
= 4 V
= 125°C
= 150°C
T
J
= −55°C
20
2
0.155
25°C
2.25
25
0.205
2.5
30