NTJD4158CT1G ON Semiconductor, NTJD4158CT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD4158CT1G
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4158CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 250mA, 880mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4158CT1G; NTJD4158CT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 3)
Drain−to−Source
Drain−to−Source Breakdown
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Gate Threshold
Drain−to−Source On Resistance
Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Breakdown Voltage
Voltage Temperature Coefficient
Temperature Coefficient
Parameter
V
V
V
Symbol
V
Q
R
Q
(BR)DSS
t
t
(BR)DSS
GS(TH)
C
C
t
t
d(OFF)
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
d(ON)
DS(on)
V
g
DSS
GSS
G(TH)
t
(T
T
T
OSS
RSS
RR
FS
ISS
t
t
t
t
SD
GS
GD
r
f
r
f
J
J
J
= 25°C unless otherwise noted)
/
/
N/P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
http://onsemi.com
V
V
GS
GS
V
V
V
V
V
V
V
V
V
f = 1 MHz, V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 0 V, d
V
V
V
V
GS
= 0 V, d
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= 0 V, V
= 0 V, V
= 0 V, T
= 0 V, T
V
V
V
V
V
V
2
V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
GS
GS
V
GS
V
V
V
I
GS
GS
GS
DS
D
I
V
DS
D
GS
GS
DS
IS
IS
DS
= 250 mA, R
= V
= −4.5 V, V
= 0 V
= −0.5 A, R
= −4.5 V, I
= −2.5 V, I
= −10 V, I
= 4.5 V, V
/d
/d
Test Condition
DS
DS
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 3.0 V, I
J
DS
DS
= 0 V, V
GS
J
t
t
DS
= 125°C
= 100 A/ms
= 8.0 A/ms
= 25°C
= −16 V
= −16 V
DS
DS
DS
DS
= 30 V
= 30 V
= 0 V
DS
DS
DS
DS
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= 24 V, I
= 24 V, I
= 24 V, I
= 24 V, I
GS
GS
D
DD
D
D
D
D
D
DD
G
= −0.88 A
G
= 10 mA
= −0.88 A
= 10 mA
= −0.71 A
= 10 mA
= −4.5 V
= 20 W
= 10 V
= 5.0 V,
= 50 W
= −10 V,
D
D
D
D
D
D
D
D
I
I
I
S
V
V
V
I
I
V
V
V
= 0.1 A
= −0.88 A
= 0.1 A
= −0.88 A
= 0.1 A
= −0.88 A
= 0.1 A
= −0.88 A
I
D
I
D
T
I
S
I
S
I
D
D
T
S
S
S
DS
DS
DS
= −0.48 mA
DS
DS
DS
J
= −250 mA
= −250 mA
= −0.48 A
= −0.48 A
J
= 250 mA
= 100 mA
= 10 mA
= 10 mA
= 10 mA
= 125°C
= 25°C
= −20 V
= −20 V
= −20 V
= 5.0 V
= 5.0 V
= 5.0 V
−0.45
Min
−20
0.8
30
0.215
0.345
−0.66
−9.0
−2.7
0.08
7.25
0.65
13.5
0.65
−0.8
0.45
12.4
TBD
Typ
155
0.5
0.5
1.2
3.2
1.0
1.5
3.0
0.9
2.2
0.2
0.2
0.3
0.5
0.2
5.8
6.5
3.5
33
20
19
25
18
15
66
56
78
0.260
0.500
Max
−1.2
225
1.0
1.0
1.0
1.0
1.5
1.5
2.5
1.5
3.5
0.7
33
32
40
12
30
Unit
mV/
mV/
mA
mA
nC
°C
°C
pF
ns
ns
W
V
V
S
V