STS9D8NH3LL STMicroelectronics, STS9D8NH3LL Datasheet - Page 4

MOSFET DUAL N-CHAN 30V 9A 8-SOIC

STS9D8NH3LL

Manufacturer Part Number
STS9D8NH3LL
Description
MOSFET DUAL N-CHAN 30V 9A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS9D8NH3LL

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A, 9 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6030-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS9D8NH3LL
Manufacturer:
ST
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Part Number:
STS9D8NH3LL
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STS9D8NH3LL
Quantity:
17 500
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
R
CASE
V
(BR)DSS
C
I
I
I
DS(on)
DS(on)
C
C
GS(th)
Q
Q
DSS
DSS
GSS
Q
oss
rss
iss
gs
gd
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
GS
= 0)
= 0)
I
V
V
@125°C
V
V
I
V
V
V
V
V
V
V
V
(see Figure 25)
D
D
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DD
= 250 µA, V
= 250 µA
Test conditions
Test conditions
= Max rating
=Max rating
= ± 16 V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 4.5 V, I
= 25 V, f = 1 MHz,
= 0
= 4.5 V
= 15 V, I
GS
,
D
D
D
D
D
GS
= 4 A
= 4.5 A
= 8 A,
= 4 A
= 4.5 A
= 0
Type
Type
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
Min.
Min.
30
30
1
1
0.018
0.012
0.020
0.014
Typ.
1070
Typ.
857
147
290
2.5
2.3
2.8
20
34
7
8
2
STS9D8NH3LL
0.0175
Max.
0.022
0.015
0.025
Max.
±100
±100
10
11
10
10
1
1
Unit
Unit
nC
nC
nC
nC
nC
nC
pF
pF
pF
pF
pF
pF
µA
µA
µA
µA
nA
nA
V
V
V
V

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