STS9D8NH3LL STMicroelectronics, STS9D8NH3LL Datasheet - Page 3

• Manufacturer Part Number: STS9D8NH3LL
• Description: MOSFET DUAL N-CHAN 30V 9A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS9D8NH3LL

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 857pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A, 9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6030-2

STS9D8NH3LL
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. Starting T
Table 3.
1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t < 10s
Symbol
Symbol
R
I
E
DM
P
thj-a
V
V
T
AS
T
I
I
TOT
GS
DS
stg
D
D
J
(1)
(2)
(1)
Drain-source voltage (v
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at
T
Drain current (pulsed)
Total dissipation at T
Single pulse avalanche energy
J
Thermal resistance junction-ambient max
Thermal operating junction-ambient
Storage temperature
Absolute maximum ratings
Thermal data
C
= 25 °C, I
= 100°C
D
= 7.5 A
Parameter
C
= 25°C
GS
Parameter
= 0)
C
= 25°C
Type
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
1
2
1
2
1
2
1
2
1
2
1
2
-55 to 150
Value
Value
62.5
150
±16
±16
150
6.3
30
30
32
36
8
9
5
2
2
Electrical ratings
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
V
V
A
A
A
A
A
A
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