PHP225,118 NXP Semiconductors, PHP225,118 Datasheet - Page 6

• Manufacturer Part Number: PHP225,118
• Description: MOSFET P-CH 30V 2.3A SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHP225,118

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934033490118; PHP225 /T3; PHP225 /T3

NXP Semiconductors
PHP225
Product data sheet
Fig 4.
Fig 6.
(pF)
(A)
I
600
400
200
−10
C
D
−8
−6
−4
−2
0
0
voltage; P-channel; typical values
function of gate-source voltage; P-channel;
typical values
Capacitance as a function of drain-source
Transfer characteristics: drain current as a
0
0
−2
−10
−4
−20
C
C
C
oss
−6
rss
iss
V
All information provided in this document is subject to legal disclaimers.
DS
V
GS
(V)
mbe157
mbe144
(V)
−30
−8
Rev. 04 — 17 March 2011
Fig 5.
Fig 7.
V
(V)
GS
−10
−10
(A)
I
−8
−6
−4
−2
−8
−6
−4
−2
D
0
0
function of drain-source voltage; P-channel;
typical values
charge; P-channel; typical values
Output characteristics: drain current as a
Gate-source voltage as a function of gate
0
0
V
−10 V
GS
Dual P-channel intermediate level FET
−2
=
−2
−7.5 V
−4
−4
−6
−6
−8
© NXP B.V. 2011. All rights reserved.
−8
−10
PHP225
Q
−2.5 V
V
−3.5 V
−6 V
−4.5 V
−3 V
g
−5 V
−4 V
mbe154
mbe145
DS
(nC)
(V)
−10
−12
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