PHP225 NXP Semiconductors, PHP225 Datasheet
PHP225
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PHP225 Summary of contents
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... PHP225 Dual P-channel intermediate level FET Rev. 04 — 17 March 2011 1. Product profile 1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... SOT96-1 (SO8) Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET Graphic symbol sym115 Version SOT96-1 © NXP B.V. 2011. All rights reserved. ...
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... open drain ≤ 80 ° °C; pulsed °C amb ° °C amb ≤ 80 ° °C; pulsed sp All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET Min Max - - - -2.3 [1] - - [4] - 1.3 [ -65 ...
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... T (°C) s δ = 0.01 T (1) R Fig 2. SOAR; P-channel Conditions see Figure 3 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET ( δ −1 −1 − °C. s limitation. ...
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... MHz ° - ° - - G(ext Ω ° -1. ° -1. /dt = 100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET Min Typ Max - -2 -100 - - 100 - - 100 - 0.22 0.25 - 0.33 0.4 -2 250 - - 140 - ...
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... Output characteristics: drain current as a function of drain-source voltage; P-channel; typical values −8 −6 −4 −2 0 −2 −4 −6 0 Gate-source voltage as a function of gate charge; P-channel; typical values PHP225 mbe154 −6 V −5 V −4.5 V −4 V −3.5 V −3 V −2.5 V −10 −12 V (V) DS mbe145 −8 − ...
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... Typical mA; V GSth D DS Temperature coefficient of gate-source threshold voltage − (A) −4 (1) (2) −2 0 −0.5 −1 −1.5 0 voltage PHP225 mbe138 150 T (° GSth mbe156 (3) −2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... A 1 θ detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION PHP225 SOT96 (1) θ 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02-18 © NXP B.V. 2011. All rights reserved ...
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... Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET Supersedes PHP225 v.3 PHP225 v.2 © NXP B.V. 2011. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHP225 Dual P-channel intermediate level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 Dual P-channel intermediate level FET Trademarks © NXP B.V. 2011. All rights reserved. PHP225 ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PHP225 All rights reserved. Date of release: 17 March 2011 Document identifier: PHP225 ...