PHP225,118 NXP Semiconductors, PHP225,118 Datasheet - Page 2

• Manufacturer Part Number: PHP225,118
• Description: MOSFET P-CH 30V 2.3A SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHP225,118

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934033490118; PHP225 /T3; PHP225 /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PHP225
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHP225
Symbol Description
S1
G1
S2
G2
D2
D2
D1
D1
Pinning information
Ordering information
source1
gate1
source2
gate2
drain2
drain2
drain1
drain1
Package
Name
SO8
Description
plastic small outline package; 8 leads; body width 3.9 mm
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
Simplified outline
SOT96-1 (SO8)
8
1
5
4
Dual P-channel intermediate level FET
Graphic symbol
D1 D1 D2 D2
S1 G1 S2 G2
© NXP B.V. 2011. All rights reserved.
PHP225
sym115
Version
SOT96-1
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