2N7002PV,115 NXP Semiconductors, 2N7002PV,115 Datasheet
2N7002PV,115
Manufacturer Part Number
2N7002PV,115
Description
MOSFET N-CH DUAL 60V SOT-666
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002PV115.pdf
(16 pages)
Specifications of 2N7002PV,115
Package / Case
SS Mini-6 (SOT-666)
Mounting Type
Surface Mount
Power - Max
300mW
Fet Type
2 N-Channel (Dual)
Current - Continuous Drain (id) @ 25° C
300mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Standard
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002PV,115
Manufacturer:
NXP
Quantity:
96 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Table 1.
[1]
Symbol
Per transistor
V
V
I
R
D
DS
GS
DSon
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Quick reference data
2
.
T
T
T
Conditions
V
T
V
I
D
amb
amb
amb
j
GS
GS
= 25 °C;
= 500 mA
= 10 V
= 10 V;
= 25 °C
= 25 °C
= 25 °C;
[1]
Min
-
-
-
-
Typ
-
-
-
1
Product data sheet
Max
60
±20
350
1.6
Unit
V
V
mA
Ω
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