SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 8
![MOSFET N/P-CH 20V 1.4/.96A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3850ADV-T1-E3
Manufacturer Part Number
SI3850ADV-T1-E3
Description
MOSFET N/P-CH 20V 1.4/.96A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3850ADV-T1-E3.pdf
(9 pages)
Specifications of SI3850ADV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.4A, 960mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Power - Max
1.08W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.4 A @ N Channel or 0.96 A @ P Channel
Power Dissipation
1080 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
240mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3850ADV-T1-E3TR
Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73789.
www.vishay.com
8
0.01
0.1
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
= P
S-60470-Rev. A, 27-Mar-06
t
2
Document Number: 73789
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
1000