SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI3850ADV-T1-E3
• Description: MOSFET N/P-CH 20V 1.4/.96A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.4 A @ N Channel or 0.96 A @ P Channel
• Power Dissipation: 1080 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-E3TR

Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
6
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
V
= 1 A
GS
On-Resistance vs. Drain Current
0.5
= 2.5 V
0.5
0.5
V
DS
Output Characteristics
Q
V
g
– Drain-to-Source Voltage (V)
DS
I
1.0
D
– Total Gate Charge (nC)
Gate Charge
= 10 V
– Drain Current (A)
1.0
1.0
V
DS
1.5
= 5 V
1.5
1.5
V
V
GS
2.0
GS
V
3 V
3.5 V
2.5 V
= 15 V
= 3 V
GS
V
GS
= 5 thru 4 V
2.0
2.0
2 V
= 4.5 V
2.5
2.5
2.5
3.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
110
2.0
1.6
1.2
0.8
0.4
0.0
88
66
44
22
- 50
0
0
0
I
On-Resistance vs. Junction Temperature
D
- 25
= 0.5 A
V
4
1
T
V
DS
0
Transfer Characteristics
J
GS
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
C
– Gate-to-Source Voltage (V)
rss
25
Capacitance
8
2
25 °C
- 55 °C
50
S-60470-Rev. A, 27-Mar-06
C
Document Number: 73789
oss
12
75
3
V
GS
C
100
iss
T
= 3 V
C
V
GS
= 125 °C
16
4
= 4.5 V
125
150
20
5