si3850adv Vishay, si3850adv Datasheet

si3850adv

Manufacturer Part Number

si3850adv

Description

Complementary Mosfet Half-bridge N- And P-channel

Manufacturer

Vishay

Datasheet

1.SI3850ADV.pdf (9 pages)

Current page: 1 of 9
Download datasheet (125Kb)

Notes:

Maximum under Steady State condition is 150 °C/W.

Document Number: 73789

S-60470-Rev. A, 27-Mar-06

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,

± ≤ 10 sec)

PRODUCT SUMMARY

N-Channel

P-Channel

Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)

Complementary MOSFET Half-Bridge (N- and P-Channel)

Top View

TSOP-6

- 20

(V)

0.640 at V

0.980 at V

0.300 at V

0.410 at V

= 150 °C)

DS(on)

(Ω)

= - 4.5 V

= - 3.0 V

= 4.5 V

= 3.0 V

= 25 °C, unless otherwise noted

- 0.96

- 0.78

1.4

1.2

(A)

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

• 100 % R

Symbol

, T

thJA

stg

Tested

N-Channel

1.4

1.1

3.5

0.9

N- or P-Channel

- 55 to 150

± 12

1.08

0.70

115

Vishay Siliconix

P-Channel

Si3850ADV

- 0.96

- 0.77

- 2.0

- 0.9

- 20

www.vishay.com

RoHS

COMPLIANT

°C/W

Unit

°C

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