SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3850ADV-T1-E3
• Description: MOSFET N/P-CH 20V 1.4/.96A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.4 A @ N Channel or 0.96 A @ P Channel
• Power Dissipation: 1080 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-E3TR

Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
0.001
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.01
0.2
0.1
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
V
SD
0
Threshold Voltage
T
– Source-to-Drain Voltage (V)
J
– Temperature (°C)
25
150 °C
0.6
50
0.9
25 °C
75
0.01
I
D
0.1
10
= 250 µA
*Limited by r
1
0.1
100
* V
1.2
I
D
GS
Single Pulse
= 5 mA
T
125
A
= 25 °C
DS(on)
V
minimum V
DS
150
1.5
– Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BV
DSS
at which r
Limited
DS(on)
10
is specified
1.5
1.2
0.9
0.6
0.3
0.0
24
18
12
30
0.001
6
0
100 ms
1 ms
10 ms
10 s
dc
1 s
0
On-Resistance vs. Gate-to-Source Voltage
100
V
1
0.01
GS
Single Pulse Power
– Gate-to-Source Voltage (V)
Time (sec)
2
25 °C
S-60470-Rev. A, 27-Mar-06
0.1
Document Number: 73789
3
125 °C
1
4
10
5