PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 5

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHC21025
Product data sheet
Symbol
R
Fig 4.
th(j-sp)
R
(K/W)
th j-s
10
10
10
−1
1
2
10
Transient thermal impedance from junction to solder point as a function of pulse duration
−6
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
0.05
0.75
0.33
0.02
0.01
0.5
0.1
0.2
δ =
10
0
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 04 — 17 March 2011
10
−3
Conditions
10
Complementary intermediate level FET
−2
Min
-
10
P
−1
PHC21025
Typ
-
t
p
t
p
T
© NXP B.V. 2011. All rights reserved.
(s)
δ =
mbe152
Max
35
t
T
t
p
1
Unit
K/W
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