PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 11

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
PHC21025
Product data sheet
Fig 17. Temperature coefficient of gate-source
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
k
1.2
1.1
1.0
0.9
0.8
0.7
0.6
threshold voltage
Typical V
Typical R
(1) I
(2) I
−50
D
D
= -1 A; V
= -0.5 A; V
GSth
DSon
0
at I
at:
GS
GS
D
= -10 V.
= 1 mA; V
= -4.5 V.
50
k
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
= V
All information provided in this document is subject to legal disclaimers.
T
j
GS
mbe138
(°C)
= V
150
Rev. 04 — 17 March 2011
0
GSth
.
50
Fig 18. Temperature coefficient of drain-source
k
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
on-state resistance; N-channel
Typical R
(1) I
(2) I
T
j
D
D
mbe146
(°C)
Complementary intermediate level FET
= 2.2 A; V
= 1 A; V
(1)
(2)
150
DSon
0
GS
at:
GS
= 4.5 V.
= 10 V.
50
PHC21025
100
© NXP B.V. 2011. All rights reserved.
(1)
(2)
T
j
(°C)
mbe139
150
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