SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 9
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SI5519DU-T1-GE3
Manufacturer Part Number
SI5519DU-T1-GE3
Description
MOSFET N/P-CH 20V PWRPAK CHPFET
Manufacturer
Vishay
Datasheet
1.SI5519DU-T1-GE3.pdf
(12 pages)
Specifications of SI5519DU-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 6.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A, 4.8A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
17.5nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 10V
Power - Max
2.27W
Mounting Type
Surface Mount
Package / Case
PowerPAK® ChipFet Dual
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
8V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6 A, - 4.8 A
Power Dissipation
2.27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5519DU-T1-GE3TR
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
0.001
0.01
100
1.2
1.1
1.0
0.9
0.8
0.7
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
I
D
V
= 250 µA
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T - Temperature (°C)
25
0.6
50
T
75
0.001
J
0.01
100
0.8
0.1
= 25 °C
10
1
0.1
100
* V
Limited by R
Safe Operating Area, Junction-to-Case
1.0
GS
Single Pulse
125
T
A
> minimum V
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
DS(on)
10
0.20
0.16
0.12
0.08
0.04
0.00
30
25
20
15
10
is specified
5
0
0.001
1
10 s
10 ms
100 ms
DC
1 s
On-Resistance vs. Gate-to-Source Voltage
0.01
100
V
GS
2
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
T
A
= 25 °C
Time (s)
3
1
Vishay Siliconix
T
A
= 125 °C
Si5519DU
10
www.vishay.com
4
I
D
100
= 4 A
1000
5
9