SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5519DU-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK CHPFET
• Manufacturer: Vishay

Specifications of SI5519DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 2.27W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6 A, - 4.8 A
• Power Dissipation: 2.27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5519DU-T1-GE3TR

Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
25
20
15
10
8
6
4
2
0
5
0
0
0
0
I
D
= 6.7 A
V
GS
2
1
= 2.5 V
V
5
DS
Output Characteristics
Q
g
V
- Drain-to-Source Voltage (V)
GS
- Total Gate Charge (nC)
4
I
D
Gate Charge
- Drain Current (A)
= 5 V thru 3.5 V
V
2
DS
10
= 10 V
6
V
GS
3
= 4.5 V
8
V
V
V
GS
15
V
GS
GS
GS
= 16 V
= 2.5 V
= 3 V
4
10
= 2 V
12
20
5
1000
800
600
400
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.5
4
V
V
GS
Transfer Characteristics
DS
T
0
J
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
1.0
J
J
= 25 °C
= 125 °C
Capacitance
25
8
C
oss
1.5
50
V
I
S-81449-Rev. B, 23-Jun-08
D
Document Number: 74406
GS
= 5 A
C
= 4.5 V,
12
iss
75
2.0
T
J
100
= - 55 °C
V
I
D
GS
16
= 5 A
2.5
= 2.5 V,
125
150
3.0
20