SI5519DU Vishay Siliconix, SI5519DU Datasheet
SI5519DU
Related parts for SI5519DU
SI5519DU Summary of contents
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... Bottom View Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5519DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...
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... GEN ° 3 2 N-Channel 3.1 A, dI/dt = 100 A/µ P-Channel 2.2 A, dI/ 100 A/µ Si5519DU Vishay Siliconix a Min. Typ. N-Ch 5.5 P-Ch 4.5 = 2.04 Ω Ω P- 2.63 Ω P- Ω P-Ch 8.5 N-Ch P-Ch N-Ch P- N-Ch ...
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... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 6 ...
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... Limited by R DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si5519DU Vishay Siliconix 0.10 0. °C A 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.02 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 Total Gate Charge (nC) ...
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... DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Si5519DU Vishay Siliconix 0.20 0.16 0. 125 ° °C A 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 30 25 ...
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... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 9 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.02 0.01 0.001 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...