SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI5519DU-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK CHPFET
• Manufacturer: Vishay

Specifications of SI5519DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 2.27W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6 A, - 4.8 A
• Power Dissipation: 2.27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5519DU-T1-GE3TR

Si5519DU
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
DS
DS
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
= - 10 V, V
= - 10 V, V
V
= - 20 V, V
V
V
= 10 V, V
V
= - 10 V, V
V
= 10 V, V
V
= 20 V, V
V
V
= 10 V, V
V
GS
V
V
DS
V
GS
V
DS
V
V
DS
GS
DS
DS
DS
GS
DS
GS
GS
DS
DS
= - 2.5 V, I
≤ - 5 V, V
= V
= - 4.5 V, I
= - 10 V, I
= 0 V, V
= 0 V, I
= V
= - 20 V, V
= 0 V, I
≤ 5 V, V
= 4.5 V, I
= 2.5 V, I
I
I
= 20 V, V
= 10 V, I
D
D
I
I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 10 V, I
D
= 4.5 V, I
= 10 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
D
= - 250 µA
D
D
= 250 µA
D
D
D
= 250 µA
GS
GS
= - 1.05 A
= ± 12 V
= 6.7 A
= - 4.8 A
= 4.5 V
= - 4.5 V
= 6.1 A
= - 4.8 A
= 1.6 A
= 0 V
= 0 V
J
D
D
J
D
= 55 °C
D
= 55 °C
= 4.8 A
= 4.8 A
= - 3.2 A
= - 3.2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.6
- 20
- 10
0.6
20
25
S-81449-Rev. B, 23-Jun-08
Document Number: 74406
- 18.2
Typ.
20.74
0.030
0.053
0.052
0.078
11.65
1.83
11.7
1.48
1.05
660
475
108
135
100
4.0
9.5
5.4
6.0
1.4
2.1
5.2
9.8
15
65
a
0.036
0.064
0.063
0.095
Max.
- 100
- 1.8
17.5
100
- 10
1.8
8.1
9.0
- 1
10
18
1
mV/°C
Unit
µA
nC
nA
pF
V
V
A
Ω
S
Ω