SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SI4561DY-T1-GE3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4561DY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4561DY-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
- 0.1
- 0.3
100
0.7
0.5
0.3
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
T
0
J
Threshold Voltage
- Source-to-Drain Voltage (V)
= 150 °C
T
J
- Temperature (°C)
25
0.6
50
I
D
0.9
= 250 µA
75
T
0.01
100
J
0.1
10
100
= 25 °C
1
0.1
1.2
I
Limited by R
D
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
= 5 mA
125
T
A
GS
= 25 °C
> minimum V
150
1.5
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
0.12
0.09
0.06
0.03
10
100
DS(on)
80
60
40
20
0
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1 s
10 s
100 ms
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si4561DY
T
1
I
T
www.vishay.com
A
D
A
= 125 °C
= 5 A
8
= 25 °C
10
1
0
9