SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 9
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4561DY-T1-GE3
Manufacturer Part Number
SI4561DY-T1-GE3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4561DY-T1-GE3.pdf
(12 pages)
Specifications of SI4561DY-T1-GE3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
29.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4561DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
- 0.1
- 0.3
100
0.7
0.5
0.3
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
T
0
J
Threshold Voltage
- Source-to-Drain Voltage (V)
= 150 °C
T
J
- Temperature (°C)
25
0.6
50
I
D
0.9
= 250 µA
75
T
0.01
100
J
0.1
10
100
= 25 °C
1
0.1
1.2
I
Limited by R
D
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
= 5 mA
125
T
A
GS
= 25 °C
> minimum V
150
1.5
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
0.12
0.09
0.06
0.03
10
100
DS(on)
80
60
40
20
0
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1 s
10 s
100 ms
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si4561DY
T
1
I
T
www.vishay.com
A
D
A
= 125 °C
= 5 A
8
= 25 °C
10
1
0
9