SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 8
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4561DY-T1-GE3
Manufacturer Part Number
SI4561DY-T1-GE3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4561DY-T1-GE3.pdf
(12 pages)
Specifications of SI4561DY-T1-GE3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
29.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4561DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.050
0.044
0.038
0.032
0.026
0.020
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
V
GS
GS
On-Resistance vs. Drain Current
0.5
6
8
V
= 4.5 V
= 10 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 20 V
- Drain Current (A)
Gate Charge
1.0
12
16
V
DS
V
= 10 V
GS
1.5
18
24
= 10 thru 4 V
V
DS
= 30 V
2.0
32
24
3 V
2.5
30
40
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
C
= 5 A
- 25
oss
T
C
6
V
V
= 125 °C
GS
Transfer Characteristics
DS
T
1
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
C
Capacitance
25
12
= 25 °C
C
S09-0220-Rev. C, 09-Feb-09
50
2
iss
Document Number: 69730
18
V
75
GS
= 10 V
T
100
V
C
3
GS
= - 55 °C
24
= 4.5 V
125
150
30
4