SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4561DY-T1-GE3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4561DY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4561DY-T1-GE3TR

Si4561DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
Q
g
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
DS
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 20 V, V
= - 20 V, V
= - 40 V, V
V
V
= - 20 V, V
= 40 V, V
V
V
V
V
V
= 20 V, V
= 20 V, V
V
V
V
= 20 V, V
V
V
DS
DS
GS
DS
DS
DS
V
GS
V
GS
V
GS
DS
DS
DS
GS
DS
GS
= V
= - 5 V, V
= 0 V, V
= 0 V, I
= V
= - 40 V, V
= - 4.5 V, I
II
= 0 V, I
= - 10 V, I
= - 15 V, I
I
= 40 V, V
= 5 V, V
I
D
I
= 4.5 V, I
D
= 10 V, I
= 15 V, I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
Test Conditions
= - 250 µA
GS
= - 250 µA
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
GS
GS
, I
, I
D
= - 4.5 V, I
D
= 0 V, T
= - 10 V, I
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
= 4.5 V I
= 10 V, I
= 0 V, f = 1 MHz
GS
GS
= - 250 µA
= - 250 µA
= 250 µA
GS
= 250 µA
D
D
D
D
D
D
GS
= ± 20 V
= 10 V
= - 10 V
= 5 A
= - 5 A
= 5 A
= - 5 A
= 4 A
= - 4 A
= 0 V
= 0 V
J
J
= 55 °C
D
D
= 55 °C
D
D
= 5 A
= 5 A
= - 5 A
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 1.4
- 40
- 10
1.4
40
10
S09-0220-Rev. C, 09-Feb-09
0.0295
0.0285
0.0355
Typ.
0.037
1555
- 5.5
11.7
38.5
- 41
640
176
142
Document Number: 69730
4.3
5.3
1.9
4.2
1.7
7.0
2.2
44
22
20
73
41
17
3
a
0.0355
0.0425
0.035
0.047
Max.
- 100
- 3.0
- 10
100
3.0
- 1
10
20
60
27
1
9
mV/°C
Unit
nA
µA
nC
pF
Ω
Ω
V
V
A
S