SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 10

MOSFET N/P-CH 40V 8-SOIC

SI4561DY-T1-GE3

Manufacturer Part Number
SI4561DY-T1-GE3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4561DY-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
29.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4561DY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.0
3.2
2.4
1.6
0.8
0.0
0
25
Power Derating, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
8
6
5
3
2
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
S09-0220-Rev. C, 09-Feb-09
Document Number: 69730
100
125
150

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