SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet

MOSFET N-CH DUAL 30V 8-SOIC

SI4618DY-T1-E3

Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4618DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY/PBF
Quantity:
112 200
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
G
S
G
S
30
1
2
2
2
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
2
3
4
C
V
= 25 °C.
DS
30
30
(V)
T op V i e w
Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
SO-8
0.0195 at V
0.0115 at V
0.017 at V
0.010 at V
0.43 V at 1.0 A
R
V
J
DS(on)
SD
= 150 °C)
b, d
8
7
6
5
(V)
GS
GS
GS
GS
D
S
S
S
(Ω)
= 10 V
= 10 V
= 4.5 V
= 4.5 V
1
1
1
1
/D
/D
/D
2
2
2
I
D
15.2
14.1
8.0
7.5
(A)
A
a
I
= 25 °C, unless otherwise noted
F
Q
Steady State
3.8
(A)
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
g
12.5
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
(Typ.)
17
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
Symbol
Symbol
T
R
R
J
V
V
E
I
I
Definition
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
and UIS Tested
Typ.
®
72
51
Channel-1
Channel-1
Power MOSFET
1.25
1.38
0.88
N-Channel 1
N-Channel 2
6.7
5.4
± 16
11.2
1.98
1.26
MOSFET
MOSFET
8.0
6.4
1.8
G
G
30
35
35
15
b, c
b, c
1
2
b, c
b, c
b, c
Max.
90
63
- 55 to 150
D
S
Typ.
1
2
43
25
Channel-2
Channel-2
11.4
2.35
9.1
2.4
1.5
± 16
15.2
12.1
11.2
4.16
2.66
Vishay Siliconix
3.8
30
60
35
15
b, c
b, c
b, c
b, c
b, c
Max.
53
30
Schottky Diode
Si4618DY
S
www.vishay.com
1
/D
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4618DY-T1-E3

SI4618DY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4618DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... ≅ 4 GEN g Channel-2 t d(off Ω ≅ 4 GEN ° Channel dI/dt = 100 A/µ Channel dI/dt = 100 A/µ Si4618DY Vishay Siliconix a Typ. Min. Max Ch-1 87 130 = 1 Ω Ch-2 97 145 Ch Ch Ω Ch-1 1.8 Ch-2 3.8 Ch-1 35 ...

Page 4

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 0.013 0.010 Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com 1.8 2.4 3.0 ...

Page 5

... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY Vishay Siliconix 125 °C 25 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 1 ms ...

Page 6

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 74450 S09-2109-Rev. B, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4618DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 °C/W thJA ( ...

Page 8

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.012 0.011 0.010 0.009 0.008 0.007 Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com 1.8 2.4 3.0 ...

Page 9

... S09-2109-Rev. B, 12-Oct-09 0.8 1.0 1 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY Vishay Siliconix 0. 0.04 0.03 0.02 125 °C 0.01 25 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 ...

Page 10

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74450. Document Number: 74450 S09-2109-Rev. B, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4618DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 125 ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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