SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 10
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Si4618DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
5
4
3
2
1
0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
100
17
14
10
7
3
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
S09-2109-Rev. B, 12-Oct-09
Document Number: 74450
100
125
150