SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI5509DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5509DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A, 3.9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 43mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.052 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A, - 3.9 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5509DC-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
0.001
0.01
100
1.2
1.1
1.0
0.9
0.8
0.6
0.7
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
V
T
T
SD
0
A
J
= 125 °C
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
25
I
D
50
= 250 μA
0.001
0.01
100
T
0.1
10
75
A
1
= 25 °C
0.8
0.1
Limited by R
Single Pulse
100
T
* V
A
Safe Operating Area, Junction-to-Case
= 25 °C
GS
> minimum V
125
V
DS
DS(on)
- Drain-to-Source Voltage (V)
150
1.2
1
*
GS
BVDSS Limited
at which R
DS(on)
10
is specified
0.3
0.2
0.1
100 ms
DC
10 ms
1 s
10 s
10
50
40
30
20
0
0
10
1
-4
On-Resistance vs. Gate-to-Source Voltage
100
10
-3
V
GS
2
10
Single Pulse Power
- Gate-to-Source Voltage (V)
-2
T
A
= 25 °C
10
Time (s)
-1
3
T
Vishay Siliconix
A
= 125 °C
1
Si5509DC
10
4
www.vishay.com
I
D
= 3.9 A
100
600
5
9