SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet - Page 3
![MOSFET N/P-CH 20V CHIPFET 1206-8](/photos/5/42/54244/pkg_5547_sml.jpg)
SI5509DC-T1-E3
Manufacturer Part Number
SI5509DC-T1-E3
Description
MOSFET N/P-CH 20V CHIPFET 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI5509DC-T1-E3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A, 3.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 5V
Input Capacitance (ciss) @ Vds
455pF @ 10V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Transistor Polarity
N And P Channel
Continuous Drain Current Id
5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
43mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.052 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5 A, - 3.9 A
Power Dissipation
2.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5509DC-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
V
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
SD
S
rr
a
b
r
f
rr
I
I
I
F
F
D
= - 1.5 A, dI/dt = - 100 A/µs, T
I
= 2.4 A, dI/dt = 100 A/µs, T
D
≅ - 3.14 A, V
≅ 4.0 A, V
V
V
I
DD
S
I
DD
S
= - 1.5 A, V
= 2.4 A, V
= - 10 V, R
= 10 V, R
T
N-Channel
P-Channel
N-Channel
P-Channel
GEN
Test Conditions
C
GEN
= 25 °C
= 4.5 V, R
= - 4.5 V, R
GS
L
GS
L
= 2.5 Ω
= 3.2 Ω
= 0 V
= 0 V
g
J
J
= 1 Ω
= 25 °C
g
= 25 °C
= 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Vishay Siliconix
Typ.
- 0.8
0.8
7.5
4.5
95
75
12
25
60
12
18
14
6
8
6
5
8
4
Si5509DC
a
www.vishay.com
- 3.75
Max.
3.75
- 1.2
143
113
- 15
1.2
12
18
38
90
10
18
27
12
9
9
8
Unit
nC
ns
ns
ns
A
V
3