SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI5509DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5509DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A, 3.9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 43mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.052 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A, - 3.9 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5509DC-T1-E3TR

Si5509DC
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
DS
V
V
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 10 V, V
= - 10 V, V
= - 20 V, V
V
V
V
= 10 V, V
V
= - 10 V, V
V
V
= 20 V, V
V
V
= 10 V, V
= 10 V, V
V
V
V
DS
V
GS
V
GS
DS
V
V
DS
GS
DS
DS
DS
GS
DS
GS
GS
DS
DS
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 10 V, I
= 0 V, V
= 0 V, I
= V
= - 20 V, V
≤ 5 V, V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
I
I
= 20 V, V
= 10 V, I
D
D
I
I
N-Channel
N-Channel
D
D
P-Channel
P-Channel
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
, I
GS
= - 4.5 V, I
, I
D
= 4.5 V, I
= - 5 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
= 5 V, I
D
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
= - 250 µA
D
D
= 250 µA
D
D
D
D
= 250 µA
GS
GS
= ± 12 V
= 5.0 A
= - 3.9 A
= 4.5 V
= - 4.5 V
= 5.0 A
= - 3.9 A
= 3.9 A
= - 2.9 A
= 0 V
= 0 V
D
J
D
D
J
D
= 55 °C
= 4.0 A
= 55 °C
= - 3.9 A
= 4.0 A
= - 3.9 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.7
- 20
- 15
0.7
20
10
S10-0547-Rev. B, 08-Mar-10
Document Number: 73629
- 15.1
0.043
0.068
Typ.
0.074
0.128
18.4
- 3.4
10.4
0.95
1.25
455
300
2.2
8.2
4.4
4.1
3.8
3.9
0.9
0.7
1.9
85
95
50
65
8
a
0.052
0.090
0.084
0.160
Max.
- 100
- 10
100
6.6
6.2
5.7
5.9
- 2
- 1
10
2
1
mV/°C
Unit
nA
µA
nC
pF
Ω
Ω
V
V
A
S