SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI5509DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5509DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A, 3.9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 43mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.052 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A, - 3.9 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5509DC-T1-E3TR

Si5509DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.20
0.15
0.10
0.05
0.00
10
2
0
8
6
4
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
0
0
0
I
D
= 3.9 A
V
GS
0.6
2
1
= 2.5 V
V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
Q
I
D
g
V
- Drain Current (A)
- Total Gate Charge
Gate Charge
1.2
DS
4
2
= 10 V
V
GS
V
GS
= 5 V thru 3 V
V
GS
= 4.5 V
1.8
6
3
= 2 V
V
GS
V
V
GS
= 1.5 V
DS
= 2.5 V
2.4
= 16 V
8
4
3.0
10
5
100
600
500
400
300
200
0.8
0.6
1.6
1.4
1.2
1.0
5
4
3
2
1
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
0.5
C
4
V
oss
V
V
V
GS
DS
0
Transfer Characteristics
T
GS
GS
J
C
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
C
= 4.5 V, I
= 2.5 V, I
T
C
= 125 °C
25
= 25 °C
Capacitance
1.0
8
D
D
50
= 5 A
= 3.9 A
S10-0547-Rev. B, 08-Mar-10
Document Number: 73629
1.5
12
75
T
C
= - 55 °C
100
2.0
16
125
150
2.5
20