BSR57,215 NXP Semiconductors, BSR57,215 Datasheet - Page 6

JFET N-CH 40V 20MA SOT23

BSR57,215

Manufacturer Part Number
BSR57,215
Description
JFET N-CH 40V 20MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSR57,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
20mA @ 15V
Drain To Source Voltage (vdss)
40V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Resistance - Rds(on)
40 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
40 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
2 V to 6 V
Gate-source Breakdown Voltage
40 V
Maximum Drain Gate Voltage
40 V
Continuous Drain Current
100 mA
Drain Current (idss At Vgs=0)
20 mA to 100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410750215
BSR57 T/R
BSR57 T/R
Philips Semiconductors
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
N-channel FETs
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
6
BSR56; BSR57; BSR58
Product specification

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