BSR57,215 NXP Semiconductors, BSR57,215 Datasheet - Page 4
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BSR57,215
Manufacturer Part Number
BSR57,215
Description
JFET N-CH 40V 20MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSR56215.pdf
(6 pages)
Specifications of BSR57,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
20mA @ 15V
Drain To Source Voltage (vdss)
40V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Resistance - Rds(on)
40 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
40 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
2 V to 6 V
Gate-source Breakdown Voltage
40 V
Maximum Drain Gate Voltage
40 V
Continuous Drain Current
100 mA
Drain Current (idss At Vgs=0)
20 mA to 100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410750215
BSR57 T/R
BSR57 T/R
BSR57 T/R
BSR57 T/R
Philips Semiconductors
Pulse generator
Oscilloscope
April 1991
handbook, halfpage
Switching times
BSR56; R =
BSR57; R =
BSR58; R =
t
Z
t
R
C
r
r
o
i
i
N-channel FETs
= t
V
Conditions I
Delay time
Rise time
Turn-off time
DD
V o
V i
f
V GSM
= 0.02
= 50
= 10 V; V
1 ns
0.75 ns
2.5 pF
0
1 M
Fig.2 Switching times waveforms.
10%
90%
D
1910
464
953
and V
GS
t d
= 0
t r
GSM
t off
200 ns
MBK299
I
t
t
t
D
d
r
off
V
GSM
4
handbook, halfpage
handbook, halfpage
(mW)
P tot
300
200
100
=
=
0
0
Fig.4 Power derating curve.
BSR56
40
V i
BSR56; BSR57; BSR58
Fig.3 Test circuit.
20
10
25
6
3
50
80
BSR57
V DD
120
R
T.U.T
10
50
6
6
4
MBK298
V o
Product specification
BSR58
160
T amb ( C)
100 ns
MDA245
10 ns
10 ns
5 mA
4 V
200