BSR57,215 NXP Semiconductors, BSR57,215 Datasheet

JFET N-CH 40V 20MA SOT23

BSR57,215

Manufacturer Part Number
BSR57,215
Description
JFET N-CH 40V 20MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSR56215.pdf (6 pages)

Specifications of BSR57,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
20mA @ 15V
Drain To Source Voltage (vdss)
40V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Resistance - Rds(on)
40 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
40 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
2 V to 6 V
Gate-source Breakdown Voltage
40 V
Maximum Drain Gate Voltage
40 V
Continuous Drain Current
100 mA
Drain Current (idss At Vgs=0)
20 mA to 100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410750215
BSR57 T/R
BSR57 T/R
Product specification
File under Discrete Semiconductors, SC07
DATA SHEET
BSR56; BSR57; BSR58
N-channel FETs
DISCRETE SEMICONDUCTORS
April 1991

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BSR57,215 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 ...

Page 2

Philips Semiconductors N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. PINNING ...

Page 3

Philips Semiconductors N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-source voltage Forward gate current Total power dissipation amb Storage temperature range Junction temperature THERMAL RESISTANCE From ...

Page 4

Philips Semiconductors N-channel FETs Switching times Conditions I and V D GSM Delay time Rise time Turn-off time 0 handbook, halfpage GSM 10% V ...

Page 5

Philips Semiconductors N-channel FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC ...

Page 6

Philips Semiconductors N-channel FETs DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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