BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 4

• Manufacturer Part Number: BFT46,215
• Description: FET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT46,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 200µA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 1.2V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: 1.2 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Drain Current (idss At Vgs=0): 0.2 mA to 1.5 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Gate-source Voltage (max): 25V
• Pin Count: 3
• Drain-gate Voltage (max): 25V
• Drain-source Volt (max): 25V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410720215; BFT46 T/R; BFT46 T/R

NXP Semiconductors
December 1997
handbook, full pagewidth
handbook, halfpage
N-channel silicon FET
(mW)
(mA)
P tot
1.25
0.75
0.25
300
200
100
I D
1.5
0.5
0
−1.25
1
0
0
V GS (V)
Fig.2 Power derating curve.
40
−1
80
−0.75
120
Fig.3 Typical values. V
160
max
T amb (°C)
−0.5
MDA245
200
−0.25
typ
4
min
DS
= 10 V; T
0
j
= 25 C.
5
V GS = 0 V
10
− 0.1 V
− 0.2 V
− 0.3 V
− 0.4 V
15
Product specification
V DS (V)
MDA272
BFT46
20