BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 3

• Manufacturer Part Number: BFT46,215
• Description: FET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT46,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 200µA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 1.2V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: 1.2 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Drain Current (idss At Vgs=0): 0.2 mA to 1.5 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Gate-source Voltage (max): 25V
• Pin Count: 3
• Drain-gate Voltage (max): 25V
• Drain-source Volt (max): 25V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410720215; BFT46 T/R; BFT46 T/R

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm  10 mm  0,7 mm.
CHARACTERISTICS
T
December 1997
Drain-source voltage
Gate-source voltage (open drain)
Drain current
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient
Gate cut-off current
Drain current
Gate-source voltage
Gate-source cut-off voltage
y-parameters at f = 1 kHz;
Input capacitance at f = 1 MHz;
Feedback capacitance at f = 1 MHz;
Equivalent noise voltage
j
= 25 C unless otherwise specified
N-channel silicon FET
Drain-gate voltage (open source)
V
V
I
I
V
Transfer admittance
Output admittance
V
Transfer admittance
Output admittance
V
V
V
B = 0,6 to 100 Hz
D
D
DS
DS
DS
DS
DS
DS
= 50 A; V
= 0,5 nA; V
GS
= 10 V; V
= 10 V; V
= 10 V; I
= 10 V; V
= 10 V; V
= 10 V; I
= 10 V; V
D
D
DS
DS
GS
GS
GS
GS
= 200 A; T
= 200 A; T
DS
= 10 V
= 10 V
= 0
= 0; T
= 0; T
= 0; T
= 0
(1)
amb
amb
amb
amb
amb
= 25 C
= 25 C
= 25 C
amb
= 25 C
= 25 C
= 40 C
(1)
3
I
I
V
V
 y
y
 y
 y
C
C
V
DSS
V
V
V
I
I
P
T
T
R
n
D
G
is
rs
GSS
stg
j
DGO
tot
os
th j-a
fs
fs
os
GS
(P)GS
DS
GSO




max.
max.
max.
max.
max.
max.
max.
=
Product specification
65 to 150 C













250 mW
150 C
430 K/W
BFT46
0,2 nA
0,2 mA
1,5 mA
0,1 V
1,0 V
1,2 V
1,0 mS
0,5 mS
1,5 pF
0,5 V
25 V
25 V
25 V
10 mA
10 S
5 mA
5 S
5 pF