BFT46,215 NXP Semiconductors, BFT46,215 Datasheet

FET N-CHAN 25V SOT-23

BFT46,215

Manufacturer Part Number
BFT46,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFT46,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
200µA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
1.2V @ 0.5nA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Cutoff Voltage
1.2 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
25 V
Continuous Drain Current
10 mA
Drain Current (idss At Vgs=0)
0.2 mA to 1.5 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Gate-source Voltage (max)
25V
Pin Count
3
Drain-gate Voltage (max)
25V
Drain-source Volt (max)
25V
Operating Temperature (min)
-65C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410720215
BFT46 T/R
BFT46 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46
N-channel silicon FET
Product specification
December 1997

Related parts for BFT46,215

BFT46,215 Summary of contents

Page 1

DATA SHEET BFT46 N-channel silicon FET Product specification DISCRETE SEMICONDUCTORS December 1997 ...

Page 2

... NXP Semiconductors N-channel silicon FET DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable. ...

Page 3

... NXP Semiconductors N-channel silicon FET RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Gate-source voltage (open drain) Drain current Gate current Total power dissipation amb Storage temperature range Junction temperature THERMAL RESISTANCE ...

Page 4

... NXP Semiconductors N-channel silicon FET 300 handbook, halfpage P tot (mW) 200 100 Fig.2 Power derating curve. 1.5 handbook, full pagewidth I D (mA) 1.25 1 0.75 0.5 0.25 0 −1.25 −1 −0. (V) December 1997 MDA245 120 160 200 T amb (°C) max typ min −0.5 −0.25 Fig.3 Typical values. V ...

Page 5

... NXP Semiconductors N-channel silicon FET 1 handbook, halfpage I D (mA) 0.75 0.5 0. Fig.4 Typical values (mS) 2 typ 0.25  y  versus I Fig C. T amb December 1997 MDA273 handbook, halfpage −V (P) 0.5 nA − 0.1 V 0.2 V 0.3 V 100 150 T j (° MDA269 handbook, halfpage ...

Page 6

... NXP Semiconductors N-channel silicon FET 3 10 handbook, halfpage | (μA/ typ  y  versus V Fig C. T amb 1.5 handbook, halfpage C rs (pF) 1 0.5 0 −1 −2 0 Fig.10 Typical values December 1997 MDA271 handbook, halfpage (V) = 0,4 mA kHz; D MDA267 handbook, halfpage −3 − ( C. ...

Page 7

... NXP Semiconductors N-channel silicon FET 4 10 handbook, full pagewidth e n (nV/ Hz handbook, full pagewidth i n (fA/ Hz December 1997 typ 3 10 Fig. 0,2 mA typ 3 10 Fig. 0,2 mA Product specification (Hz C. amb (Hz C. amb BFT46 MDA264 6 10 MDA265 6 10 ...

Page 8

... NXP Semiconductors N-channel silicon FET PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 December 1997 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 9

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 10

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 11

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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