IKW25N120T2 Infineon Technologies, IKW25N120T2 Datasheet - Page 7

• Manufacturer Part Number: IKW25N120T2
• Description: IGBT 1200V 50A 349W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 349W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
1000ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
100ns
10ns
10ns
t
t
t
t
t
d(on)
t
d(on)
r
f
f
d(off)
t
d(off)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
t
r
J
I
CE
GE
,
C
0°C
10A
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
20A
50°C
C
GE
=25A, R
=0/15V, R
J
CE
=175°C,
=600V,
30A
100°C
G
=16.4Ω,
G
=16.4Ω,
40A
TrenchStop
150°C
7
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
1000 ns
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
®
100 ns
10 ns
2
nd
generation Series
t
t
t
d(on)
t
f
d(off)
r
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
C
CE
J
,
0°C
= 1.0mA)
=600V, V
JUNCTION TEMPERATURE
R
G
,
IKW25N120T2
GATE RESISTOR
50°C
GE
=0/15V, I
J
=175°C,
Rev. 2.1
100°C
C
=25A,
150°C
Sep 08
max.
typ.
min.