IKW25N120T2 Infineon Technologies, IKW25N120T2 Datasheet - Page 6

• Manufacturer Part Number: IKW25N120T2
• Description: IGBT 1200V 50A 349W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 349W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
80A
70A
60A
50A
40A
30A
20A
10A
100A
0A
80A
60A
40A
20A
0A
0V
0V
V
V
GE
CE
2V
=17V
V
,
(T
(V
11V
13V
15V
20V
COLLECTOR
GE
9V
7V
j
CE
1V
= 25°C)
,
T
4V
J
GATE-EMITTER VOLTAGE
=20V)
=175°C
25°C
6V
2V
-
EMITTER VOLTAGE
8V
3V
10V
12V
4V
TrenchStop
6
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
100A
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
®
80A
60A
40A
20A
0A
2
nd
0V
V
V
generation Series
CE
GE
(T
saturation voltage as a function of
junction temperature
(V
T
=17V
,
11V
15V
13V
COLLECTOR
J
20V
j
GE
9V
,
7V
0°C
= 175°C)
JUNCTION TEMPERATURE
1V
= 15V)
IKW25N120T2
50°C
2V
-
EMITTER VOLTAGE
3V
Rev. 2.1
100°C
I
I
4V
C
C
I
= 3A
C
=12.5A
I
=50A
C
150°C
=25A
Sep 08