IKW25N120T2 Infineon Technologies, IKW25N120T2 Datasheet - Page 5

IGBT 1200V 50A 349W TO247-3

IKW25N120T2

Manufacturer Part Number
IKW25N120T2
Description
IGBT 1200V 50A 349W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW25N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
349W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
349W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Power Semiconductors
100A
350W
300W
250W
200W
150W
100W
Figure 1. Collector current as a function of
Figure 3. Maximum power dissipation as a
80A
60A
40A
20A
50W
0W
0A
10Hz
25°C
switching frequency
(T
V
function of case temperature
(T
50°C
f,
100Hz
GE
T
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
175 C, D = 0.5, V
175 C)
CASE TEMPERATURE
I
I
c
c
T
75°C
C
=110°C
T
1kHz
C
=80°C
100°C
G
= 12 )
10kHz
125°C
CE
= 600V,
150°C
100kHz
TrenchStop
5
Figure 2. Safe operating area
Figure 4. Maximum collector current as a
100A
50A
40A
30A
20A
10A
0.1A
®
10A
0A
1A
2
25°C
1V
nd
V
generation Series
CE
(D = 0, T
T
function of case temperature
(V
,
j
COLLECTOR
T
GE
175 C;V
C
,
CASE TEMPERATURE
10V
15V, T
IKW25N120T2
75°C
C
= 25 C,
GE
-
EMITTER VOLTAGE
j
=15V)
175 C)
100V
Rev. 2.1
125°C
1000V
Sep 08
t
150µs
500µs
p
20ms
DC
=3µs
10µs
50µs

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