SGW25N120 Infineon Technologies, SGW25N120 Datasheet - Page 4

• Manufacturer Part Number: SGW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SGW25N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 46 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGW25N120XK

Power Semiconductors
100A
350W
300W
250W
200W
150W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
80A
60A
40A
20A
50W
0A
GE
j
j
0W
10Hz
≤ 150°C, D = 0.5, V
≤ 150°C)
= +15V/0V, R
25°C
f,
T
100Hz
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
G
T
T
= 22Ω)
C
C
=110°C
75°C
1kHz
=80°C
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
100A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
60A
50A
40A
30A
20A
10A
1A
0A
GE
25°C
1V
≤ 15V, T
Figure 2. Safe operating area
(D = 0, T
V
CE
,
COLLECTOR
T
50°C
C
j
,
C
≤ 150°C)
10V
CASE TEMPERATURE
= 25°C, T
SGW25N120
75°C
-
EMITTER VOLTAGE
100V
j
≤ 150°C)
100°C
Rev. 2.4
1000V
125°C
15
t
200
1ms
50
p
DC
=1
Febr. 08
μ
μ
s
μ
μ
s
s
s