SGW25N120 Infineon Technologies, SGW25N120 Datasheet - Page 2

• Manufacturer Part Number: SGW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SGW25N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 46 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGW25N120XK

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 °C, unless otherwise specified
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
i s s
o s s
r s s
G a t e
V
I
V
T
T
I
V
V
T
T
V
V
V
V
f=1MHz
V
V
V
1 00 V≤ V
T
C
C
j
j
C E
j
j
C E
j
G E
G E
C E
C E
C E
G E
C C
G E
G E
=1 500 μA
= 25°C
= 150 °C
=1 000 μA,
= 25°C
= 150 °C
≤ 150 °C
2
=1200V,V
=0V,V
=0V,
=V
=20V, I
=25V,
=0V,
= 96 0 V, I
=15V
=15V,t
= 15 V, I
Conditions
Conditions
G E
C C
G E
≤1 200 V,
S C
C
=20V
=25A
C
C
≤1 0 μs
G E
=25A
=25A
=0V
1200
min.
2.5
3
-
-
-
-
-
-
-
-
-
-
SGW25N120
Max. Value
Value
2150
typ.
160
110
225
240
0.4
3.1
3.7
40
20
13
4
-
-
-
-
Rev. 2.4
max.
1400
2600
350
100
190
130
300
3.6
4.3
5
-
-
-
-
Febr. 08
Unit
K/W
Unit
V
μA
nA
S
pF
nC
nH
A