SGW25N120 Infineon Technologies, SGW25N120 Datasheet - Page 10

• Manufacturer Part Number: SGW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SGW25N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 46 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGW25N120XK

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
10
i,v
p(t)
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
and stray capacity C
F
τ
r
1
di /dt
1
r
F
I
1
r r m
SGW25N120
τ
r
2
2
r
t
2
S
Q
Q =Q
t =t
Rev. 2.4
r r
S
r r
t
r r
S
Q
S
σ
+
90% I
σ
F
+
t
F
=180nH,
=40pF.
Q
t
F
F
r r m
τ
r
di
10% I
n
n
r r
r
Febr. 08
n
/dt
r r m
V
T
t
R
C