SKW07N120 Infineon Technologies, SKW07N120 Datasheet - Page 9

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SKW07N120

Manufacturer Part Number
SKW07N120
Description
IGBT NPT 1200V 16.5A 125W TO247
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKW07N120

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 8A
Current - Collector (ic) (max)
16.5A
Power - Max
125W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
16.5 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
16.5 A
Ic(max) @ 100°
7.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKW07N120XK

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Power Semiconductors
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
350ns
300ns
250ns
200ns
150ns
100ns
R
R
50ns
25A
20A
15A
10A
0ns
= 800V, T
= 800V, T
5A
0A
200A/ s
200A/ s
d i
d i
F
F
/d t,
/d t,
I
F
j
j
=3.5A
= 150 C,
= 150 C,
400A/ s
400A/ s
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
=7A
I
F
=3.5A
600A/ s
600A/ s
I
F
=7A
800A/ s
800A/ s
9
1.50µC
1.25µC
1.00µC
0.75µC
0.50µC
0.25µC
0.00µC
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
dynamic test circuit in Fig.E )
300A/ s
200A/ s
100A/ s
R
0A/ s
R
= 800V, T
= 800V, T
200A/ s
200A/ s
d i
di
F
F
/d t,
/dt,
j
j
I
= 150 C,
= 150 C,
F
DIODE CURRENT SLOPE
400A/ s
=3.5A
DIODE CURRENT SLOPE
400A/ s
I
F
=3.5A
SKW07N120
600A/ s
600A/ s
Rev. 2_2
I
F
=7A
I
F
=7A
800A/ s
800A/ s
Sep 08

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