SKW07N120 Infineon Technologies, SKW07N120 Datasheet - Page 10

• Manufacturer Part Number: SKW07N120
• Description: IGBT NPT 1200V 16.5A 125W TO247
• Manufacturer: Infineon Technologies

Specifications of SKW07N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 8A
• Current - Collector (ic) (max): 16.5A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKW07N120XK

Power Semiconductors
Figure 25. Typical diode forward current as
a function of forward voltage
10
20A
15A
10A
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
10
5A
0A
-1
0
0V
K/W
K/W
10µs
p
/ T)
0.05
0.1
D =0.5
0.2
single pulse
V
100µs
1V
F
,
t
FORWARD VOLTAGE
p
,
PULSE WIDTH
T
J
=150°C
1ms
2V
R
0.75885
0.88470
0.85670
R , ( K / W )
1
C
1
=
10ms
T
1
J
/R
=25°C
1
3V
C
0.09354
0.00543
0.00042
100ms
2
=
, ( s )
2
/R
R
2
2
4V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0°C
T
j
,
JUNCTION TEMPERATURE
40°C
SKW07N120
80°C
Rev. 2_2
120°C
I
I
I
F
F
F
=3.5A
=7A
=14A
Sep 08